Power Efficiency with SiC: Advantages and Applications
Silicon Carbide (SiC): Transforming Power Electronics Silicon (Si, atomic number 14) and carbon (C, atomic number 6) combine to form silicon carbide (SiC), a wide-bandgap semiconductor. SiC’s bandgap (~3.26 eV) is nearly 3× larger than silicon’s, enabling devices that withstand higher electric fields and temperatures. This means SiC components (diodes and MOSFETs) can switch faster, […]
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